VS-HFA30TA60CHN3 www.vishay.com vishay semiconductors revision: 15-jul-15 1 document number: 94511 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 2 x 15 a features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? aec-q101 qualified, me ets jesd 201 class 1a whisker test ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description VS-HFA30TA60CHN3 is a state of the art center tap ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basi c ratings of 600 v and 15 a per leg continuous current, the VS-HFA30TA60CHN3 is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snubbing, component count and heatsink sizes. the hexfred VS-HFA30TA60CHN3 is ideally suited for applications in power supp lies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. product summary package to-220ab i f(av) 2 x 15 a v r 600 v v f at i f 1.2 v t rr typ. 19 ns t j max. 150 c diode variation common cathode to-220ab anode 13 2 base common cathode 2 common cathode anode absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 600 v maximum continuous forward current per leg i f t c = 100 c 15 a per device 30 single pulse forward current i fsm 150 maximum repetitive forward current i frm 60 maximum power dissipation p d t c = 25 c 74 w t c = 100 c 29 operating junction and storage temperature range t j , t stg -55 to +150 c
VS-HFA30TA60CHN3 www.vishay.com vishay semiconductors revision: 15-jul-15 2 document number: 94511 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications per leg (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 600 - - v maximum forward voltage v fm i f = 15 a see fig. 1 -1.31.7 i f = 30 a - 1.5 2.0 i f = 15 a, t j = 125 c - 1.2 1.6 maximum reverse leakage current i rm v r = v r rated see fig. 2 -1.010 a t j = 125 c, v r = 0.8 x v r rated - 400 1000 junction capacitance c t v r = 200 v see fig. 3 - 25 50 pf series inductance l s measured lead to lead 5 mm from package body - 8 - nh dynamic recovery characteristics per leg (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time see fig. 5 and 10 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 19 - ns t rr1 t j = 25 c i f = 15 a di f /dt = 200 a/s v r = 200 v -4260 t rr2 t j = 125 c - 70 120 peak recovery current see fig. 6 i rrm1 t j = 25 c - 4.0 6.0 a i rrm2 t j = 125 c - 6.5 10 reverse recovery charge see fig. 7 q rr1 t j = 25 c - 80 180 nc q rr2 t j = 125 c - 220 600 peak rate of fall of recovery current during t b see fig. 8 di (rec)m /dt1 t j = 25 c - 250 - a/s di (rec)m /dt2 t j = 125 c - 160 - thermal - mechanical specifications per leg parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c junction to case, single leg conducting r thjc 1.7 k/w junction to case, both legs conducting - - 0.85 thermal resistance, junction to ambient r thja typical socket mount - - 40 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.25 - weight -6.0- g -0.21- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-220ab hfa30ta60ch
VS-HFA30TA60CHN3 www.vishay.com vishay semiconductors revision: 15-jul-15 3 document number: 94511 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop vs. instantaneous forward current (per leg) fig. 2 - typical reverse current vs. reverse voltage (per leg) fig. 3 - typical junction capacitance vs. reverse voltage (per leg) fig. 4 - maximum thermal impedance z thjc characteristics (per leg) i f - instantaneous forward current (a) v fm - forward voltage drop (v) 1.0 1.4 1.8 1.2 1.6 2.0 2.2 2.4 1 100 10 t j = 150 c t j = 125 c t j = 25 c i r - reverse current (a) v r - reverse voltage (v) 0 100 200 300 400 500 600 0.01 0.1 1 10 100 1000 10 000 t j = 125 c t j = 150 c t j = 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 0 100 200 400 500 300 600 10 100 t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response p dm t 2 t 1 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c single pulse (thermal response) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
VS-HFA30TA60CHN3 www.vishay.com vishay semiconductors revision: 15-jul-15 4 document number: 94511 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse recovery time vs. di f /dt (per leg) fig. 6 - typical recovery current vs. di f /dt (per leg) fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt (per leg) fig. 9 - reverse recovery parameter test circuit t rr (ns) di f /dt (a/s) 100 1000 0 100 80 20 40 60 i f = 30 a i f = 15 a i f = 5.0 a v r = 200 v t j = 125 c t j = 25 c i rr (a) di f /dt (a/s) 100 1000 0 25 20 5 10 15 i f = 30 a i f = 15 a i f = 5 a v r = 200 v t j = 125 c t j = 25 c q rr (nc) di f /dt (a/s) 100 1000 0 800 200 400 600 i f = 30 a i f = 15 a i f = 5 a v r = 200 v t j = 125 c t j = 25 c di (rec)m /dt (a/s) di f /dt (a/s) 100 1000 100 10 000 1000 i f = 30 a i f = 15 a i f = 5 a v r = 200 v t j = 125 c t j = 25 c irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t
VS-HFA30TA60CHN3 www.vishay.com vishay semiconductors revision: 15-jul-15 5 document number: 94511 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 10 - reverse recovery waveform and definitions ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-HFA30TA60CHN3 25 500 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95222 part marking information to-220ab-n3 www.vishay.com/doc?95028 q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr 2 - hexfred ? family 4 - current rating (30 = 30 a) 4 5 - package: 4 ta = to-220ab 3 - electron irradiated 6 7 - voltage rating (60 = 600 v) 1 - vishay semiconductors product - circuit configuration: c = common cathode 8 - h = aec-q101 qualified 9 device code 5 1 3 2 4 6 7 8 9 vs- hf a 30 ta 60 c h n3 - environmental digit: n3 = halogen-free, rohs-compliant, and totally lead (pb)-free
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